Learn Bipolar Junction Transistor ( BJT ) – From Basics
Learn Bipolar Junction Transistor ( BJT ) – From Basics, available at $64.99, has an average rating of 4.2, with 73 lectures, based on 46 reviews, and has 1435 subscribers.
You will learn about Be able to learn the basics of Transistor ( Bipolar Junction Transistor ) Be able to learn operating modes of BJT Be able to learn current components of BJT in active region Be able to learn characteristics of BJT Be able to learn Amplifiers, Oscillators and Power amplifiers Be able to learn Feedback amplifiers and Multistage amplifiers This course is ideal for individuals who are Beginners in Engineering or Electronics It is particularly useful for Beginners in Engineering or Electronics.
Enroll now: Learn Bipolar Junction Transistor ( BJT ) – From Basics
Summary
Title: Learn Bipolar Junction Transistor ( BJT ) – From Basics
Price: $64.99
Average Rating: 4.2
Number of Lectures: 73
Number of Published Lectures: 73
Number of Curriculum Items: 73
Number of Published Curriculum Objects: 73
Original Price: ₹7,900
Quality Status: approved
Status: Live
What You Will Learn
- Be able to learn the basics of Transistor ( Bipolar Junction Transistor )
- Be able to learn operating modes of BJT
- Be able to learn current components of BJT in active region
- Be able to learn characteristics of BJT
- Be able to learn Amplifiers, Oscillators and Power amplifiers
- Be able to learn Feedback amplifiers and Multistage amplifiers
Who Should Attend
- Beginners in Engineering
- Electronics
Target Audiences
- Beginners in Engineering
- Electronics
The Bipolar Junction Transistor is a semiconductor device which can be used for switching or amplification
This Course deals with basics of BJT, BJT characteristic’s, BJT biasing Techniques( Fixed bias, collector to Base bias and voltage divider bias), BJT amplifiers ( CB, CE, CC amplifiers), small signal model of BJT( Hybrid model ), Feedback amplifiers, Oscillators ( RC and LC ), Multistage amplifiers and Power amplifiers.
If we now join together two individual signal diodes back-to-back, this will give us two PN-junctions connected together in series which would share a common Positve, (P) or Negative, (N) terminal. The fusion of these two diodes produces a three layer, two junction, three terminal device forming the basis of a Bipolar Junction Transistor, or BJT for short.
Transistors are three terminal active devices made from different semiconductor materials that can act as either an insulator or a conductor by the application of a small signal voltage. The transistor’s ability to change between these two states enables it to have two basic functions: “switching” (digital electronics) or “amplification” (analogue electronics). Then bipolar transistors have the ability to operate within three different regions:
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Active Region – the transistor operates as an amplifier and Ic = β*Ib
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Saturation – the transistor is “Fully-ON” operating as a switch and Ic = I(saturation)
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Cut-off – the transistor is “Fully-OFF” operating as a switch and Ic = 0
The word Transistor is a combination of the two words Transfer Varistor which describes their mode of operation way back in their early days of electronics development. There are two basic types of bipolar transistor construction, PNP and NPN, which basically describes the physical arrangement of the P-type and N-type semiconductor materials from which they are made.
The Bipolar Transistor basic construction consists of two PN-junctions producing three connecting terminals with each terminal being given a name to identify it from the other two. These three terminals are known and labelled as the Emitter ( E ), the Base ( B ) and the Collector ( C ) respectively.
Bipolar Transistors are current regulating devices that control the amount of current flowing through them from the Emitter to the Collector terminals in proportion to the amount of biasing voltage applied to their base terminal, thus acting like a current-controlled switch. As a small current flowing into the base terminal controls a much larger collector current forming the basis of transistor action.
The principle of operation of the two transistor types PNP and NPN, is exactly the same the only difference being in their biasing and the polarity of the power supply for each type.
Course Curriculum
Chapter 1: Introduction
Lecture 1: Introduction
Lecture 2: Terminals of BJT
Lecture 3: BJT Symbols
Lecture 4: BJT Operating Modes
Lecture 5: Current components of BJT in active mode
Lecture 6: Current components of BJT in active mode – 1
Lecture 7: BJT Configurations
Lecture 8: Relation between Alpha and Beta
Lecture 9: Important points
Lecture 10: Practice questions and answers
Chapter 2: BJT Characteristics
Lecture 1: Collector current of BJT
Lecture 2: Early Effect
Lecture 3: Common Base Input characteristics
Lecture 4: Common Base output characteristics
Lecture 5: Common Emitter ( CE ) Characteristics
Lecture 6: CB, CE,CC comparison
Lecture 7: Procedure to find region of the transistor
Lecture 8: Thermal Runaway
Chapter 3: BJT Biasing
Lecture 1: Introduction
Lecture 2: Selection of operating point
Lecture 3: Selection of operating point – 1
Lecture 4: Instability in collector current
Lecture 5: Stability Factor
Lecture 6: Biasing Techniques
Lecture 7: Fixed Bias ( Base Bias )
Lecture 8: Collector to Base bias
Lecture 9: Voltage Divider Bias
Lecture 10: Practice Problems from Biasing
Lecture 11: Practice Problems from Biasing – 1
Lecture 12: Compensation Techniques
Lecture 13: Diode Compensation Technique
Lecture 14: Thermistor Compensation Technique
Chapter 4: Small Signal Amplifiers
Lecture 1: Introduction
Lecture 2: Hybrid model ( H-parameter model )
Lecture 3: Hybrid model ( H-parameter model ) -1
Lecture 4: CE Amplifier
Lecture 5: CC Amplifier ( Emitter follower )
Lecture 6: Hybrid model analysis
Lecture 7: Approximate model
Lecture 8: CE amplifier hybrid model analysis
Lecture 9: CE amplifier hybrid model analysis – 1
Lecture 10: CE amplifier approximate analysis
Lecture 11: CE amplifier approximate analysis – 1
Lecture 12: CB amplifier approximate analysis
Lecture 13: CC Amplifier analysis
Chapter 5: HIGH FREQUENCY MODEL OF BJT AMPLIFIER
Lecture 1: Introduction
Lecture 2: High Frequency Model
Chapter 6: Feedback Amplifiers
Lecture 1: Introduction
Lecture 2: Types of feedback amplifiers
Lecture 3: Advantages of negative feedback amplifier
Lecture 4: Sensitivity of Feedback amplifier
Lecture 5: Mixer and sampling circuits
Lecture 6: Types of negative feedback amplifiers
Lecture 7: Voltage series ( voltage ) Feedback amplifier
Lecture 8: Voltage series ( voltage ) Feedback amplifier – 1
Lecture 9: Voltage Shunt Feedback amplifier-1
Lecture 10: Voltage Shunt Feedback amplifier-2
Lecture 11: Current Shunt Feedback amplifier
Lecture 12: Current Shunt Feedback amplifier – 1
Lecture 13: Comparison of Feedback amplifier
Chapter 7: OSCILLATORS
Lecture 1: Introduction
Lecture 2: Sinusoidal Oscillators
Lecture 3: RC phase shift oscillator -1
Lecture 4: RC phase shift oscillator -2
Lecture 5: Wein Bridge Oscillator
Lecture 6: LC Oscillator
Lecture 7: Hartley and Colpitts oscillator
Chapter 8: Multi-Stage Amplifiers
Lecture 1: Introduction
Lecture 2: Multi stage amplifier-1
Chapter 9: Power Amplifiers
Lecture 1: Introduction
Lecture 2: Power Amplifiers-1
Lecture 3: Classifications of Power Amplifier
Lecture 4: Series Fed Class – A Power amplifier
Instructors
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Edufulness Srinivas Andoor
Professional GATE ECE Faculty
Rating Distribution
- 1 stars: 0 votes
- 2 stars: 2 votes
- 3 stars: 7 votes
- 4 stars: 9 votes
- 5 stars: 28 votes
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